QL80R4Sx-Z5
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QL80R4Sx-Z5 ql80r4sa-z5 pin

808nm, 200mW Infra-Red Laser Diode

QL80R4Sx-Z5

Feature

QSI Infra-Red Laser Diode
Wavelength: 808nm (typ.)
Output Power: 200mW
Package: TO18 (RoHS compliant)
TE Polarisation
Built-in Monitor Photodiode

Applications

Medical Device
Industrial Module

Driver ICs

This diode is best driven using the following IC Haus driver:
iC-WKN
iC-WKM
iC-WKP
iC-NZN
iC-NZP
iC-HK
iC-HB

Pin options

This diode is available in the following pin types:
QL80R4SA-Z5 – N-type (Fig.1 above)
QL80R4SB-Z5 – M-type (Fig.2 above)
QL80R4SC-Z5 – P-type (Fig.3 above)
QL80R4SD-Z5 – E-type (Fig.4 above)
QL80R4SE-Z5 – H-type (Fig.5 above)
SKU: 808nm, 200mW Infra-Red Laser Diode Category: Tags: , , ,

Product Description

Absolute Maximum Ratings

(Ta=25°C)
Items
Symbols
Values
Units
Optical Output
Power
Po
200
mW
Reverse
Voltage
VR
+2
V
Operating
Current
IF
280
mA
Operating
Temperature
Topr
-10 to +40
°C
Storage
Temperature
Tstg
-40 to +85
°C

Electrical and Optical Characteristics

(Ta=25°C)
Item
Symbols
Min.
Typ.
Max.
Unit
Condition
Optical Output
Power
Po
–
200
–
mW
–
Threshold
Current
Ith
–
55
80
mA
Po=200mW
Operating
Current
Iop
–
235
280
mA
Po=200mW
Differential
Efficiency
η
–
–
–
mW/mA
Po=200mW
Operating
Voltage
Vop
–
1.9
2.5
V
Po=200mW
Peak
Wavelength
λp
803
808
813
nm
Po=200mW
Monitor
Current
Im
–
0.5
2.0
mA
Po=200mW
Beam *4
Divergence
Θ// / Θ⊥
–
8.0 / 35
12.0 / 45
deg
Po=200mW
Beam
Angle
ΔΘ// / ΔΘ⊥
-3 / -3
–
+3 / +3
deg
Po=200mW

Additional Information

Colour

InfraRed (780 – 980nm)
Wavelength

808nm
Operating Voltage

1.9 Typ. 2.5 Max.
Power Output

200mW
Operating Current

280
PIN Type

E (no PD), H (no PD), M or B (inc. PD), N or A (inc. PD), P or C (inc. PD)
Package Type

TO-18
Driver IC

iC-HB, iC-HK, iC-NZN, iC-NZP, iC-WKM, iC-WKN, iC-WKP

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