QL80T4Hx-Y
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QL80T4Hx-Y QL80T4Hx-Y pin

808nm, 1000mW Infra-Red Laser Diode

QL80T4Hx-Y

Feature

QSI Infra-Red Laser Diode
Wavelength: 808nm (typ.)
Output Power: 1000mW
Package: TO18 (RoHS compliant)
TM Polarisation
Built-in Monitor Photodiode

Applications

Medical Device
Measurement

Driver ICs

This diode is best driven using the following IC Haus driver:
iC-WKN
iC-WKM
iC-WKP
iC-NZN
iC-NZP
iC-HK
iC-HB

Pin options

This diode is available in the following pin types:
QL80T4HA-Y – N-type (see Fig.1 below)
QL80T4HB-Y – M-type (see Fig.2 below)
QL80T4HC-Y – P-type (see Fig.3 below)
QL80T4HD-Y – D-type (see Fig.4 below)
QL80T4HE-Y – E-type (see Fig.5 below)
SKU: 808nm, 1000mW Infra-Red Laser Diode Category: Tags: , , ,

Product Description

Absolute Maximum Ratings

(Ta=25°C)
Items
Symbols
Values
Units
Optical Output
Power
Po
1000
mW
Reverse
Voltage
VR
+2
V
Operating
Current
IF
1500
mA
Operating
Temperature
Topr
-10 to +40
°C
Storage
Temperature
Tstg
-40 to +85
°C

Electrical and Optical Characteristics

(Ta=25°C)
Item
Symbols
Min.
Typ.
Max.
Unit
Condition
Optical Output
Power
Po
–
1000
–
mW
–
Threshold
Current
Ith
–
250
300
mA
Po=1000mW
Operating
Current
Iop
–
1100
1500
mA
Po=1000mW
Differential
Efficiency
η
–
1
2
mW/mA
Po=1000mW
Operating
Voltage
Vop
–
2.0
2.5
V
Po=1000mW
Peak
Wavelength
λp
785
808
830
nm
Po=1000mW
Monitor
Current
Im
–
–
–
mA
Po=1000mW
Beam *4
Divergence
Θ// / Θ⊥
–
7.0 / 30
12.0 / 40
deg
Po=1000mW
Beam
Angle
ΔΘ// / ΔΘ⊥
-3 / -3
–
+3 / +3
deg
Po=1000mW

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